DocumentCode

996766

Title

Erratum: Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections

Author

Rein, H.-M.

Volume

13

Issue

6

fYear

1977

Firstpage

168

Keywords

bipolar transistors; semiconductor device models; bipolar transistors; intrinsic base lateral sections; large signal models;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19770122

Filename

4249267