مرکز منطقه ای اطلاع رساني علوم و فناوري - Erratum: Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections

DocumentCode :

996766

Title :

Erratum: Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections

Author :

Rein, H.-M.

Volume :

Issue :

fYear :

1977

Firstpage :

168

Keywords :

bipolar transistors; semiconductor device models; bipolar transistors; intrinsic base lateral sections; large signal models;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19770122

Filename :

4249267

Link To Document :