DocumentCode
996838
Title
High rate deposition of iron-oxide thin films by reactive sputtering
Author
Ouchi, H. ; Umesaki, M.
Author_Institution
Misubishi Electric Co., Hyogo, Japan
Volume
19
Issue
5
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1980
Lastpage
1982
Abstract
For the preparation of γ-Fe2 O3 thin films, an improved process utilizing a sputtering technique is described. Iron-oxide thin films were prepared by reactive sputtering of an Fe target in Ar+O2 atmosphere. Sputtered α-Fe2 O3 thin films were deposited at about ten times higher rate than the conventional method. Next, α-Fe2 O3 films were reduced in an hydrogen atmosphere. Typical reduced films showed a high squareness of 0.84 and a coercive force of 350 Oe.
Keywords
Magnetic recording/recording materials; Sputtering; Atmosphere; Inorganic materials; Iron; Magnetic films; Magnetic properties; Phase detection; Sputtering; Substrates; Temperature dependence; X-ray diffraction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1983.1062618
Filename
1062618
Link To Document