• DocumentCode
    996838
  • Title

    High rate deposition of iron-oxide thin films by reactive sputtering

  • Author

    Ouchi, H. ; Umesaki, M.

  • Author_Institution
    Misubishi Electric Co., Hyogo, Japan
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • fDate
    9/1/1983 12:00:00 AM
  • Firstpage
    1980
  • Lastpage
    1982
  • Abstract
    For the preparation of γ-Fe2O3thin films, an improved process utilizing a sputtering technique is described. Iron-oxide thin films were prepared by reactive sputtering of an Fe target in Ar+O2atmosphere. Sputtered α-Fe2O3thin films were deposited at about ten times higher rate than the conventional method. Next, α-Fe2O3films were reduced in an hydrogen atmosphere. Typical reduced films showed a high squareness of 0.84 and a coercive force of 350 Oe.
  • Keywords
    Magnetic recording/recording materials; Sputtering; Atmosphere; Inorganic materials; Iron; Magnetic films; Magnetic properties; Phase detection; Sputtering; Substrates; Temperature dependence; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1983.1062618
  • Filename
    1062618