DocumentCode
996841
Title
Effect of Dose History on SEGR Properties of Power MOSFETS
Author
Scheick, Leif Z. ; Selva, Luis E.
Author_Institution
California Inst. of Technol., Pasadena
Volume
54
Issue
6
fYear
2007
Firstpage
2568
Lastpage
2575
Abstract
We present data that show that proton radiation damage can influence the single event gate rupture response of a power MOSFET. A primary phenomenon of single event gate rupture, the drain to gate threshold at which single event gate rupture occurs, drops as a function of device dosage. The shift in the threshold voltage correlates the best with the drop in the voltage at which SEGR occurs. The increase in the field strength due to trapped charges within the oxide during a charge collection event is suspected as the mechanism.
Keywords
power MOSFET; proton effects; charge collection; dose history; drain-to-gate threshold voltage; field strength; power MOSFET; proton radiation damage; single event gate rupture properties; trapped charges; Atomic layer deposition; Atomic measurements; Energy management; History; Laboratories; MOSFETs; Protons; Radiation effects; Stress; Threshold voltage; Power MOSFET; proton dose; single event gate rupture;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2007.910127
Filename
4395079
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