DocumentCode
996872
Title
Observed behaviour of high-efficiency impatt diodes over a 30% frequency range
Author
Huish, P.W.
Author_Institution
Post Office Research Centre, Ipswich, UK
Volume
13
Issue
7
fYear
1977
Firstpage
178
Lastpage
179
Abstract
High-power high-efficiency oscillator operation of hi-lo-doped GaAs impatt diodes has been obtained over a frequency range extending from 7.5 to 12 GHz. Arrays of diodes have been used to obtain up to 7.7 W at 22% efficiency. From the measured variation of output power with load resistance, it is concluded that these diodes are operating in the premature collection mode.
Keywords
IMPATT diodes; 7.5 to 12 GHz; GaAs IMPATT diodes; high efficiency oscillator; output power; premature collection mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19770131
Filename
4249277
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