Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate

Author

Lien, Y.C. ; Chang, Edward Yi ; Chang, H.C. ; Chu, L.H. ; Huang, G.W. ; Lee, H.M. ; Lee, C.S. ; Chen, S.H. ; Shen, P.T. ; Chang, C.Y.

Author_Institution

Dept. of Mater. Sci. & Eng., National Chiao-Tung Univ., Hsinchu, Taiwan

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

348

Lastpage

350

Abstract

A 0.1-μm T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 μm and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f_T of 154 GHz and a maximum frequency f_max of 300 GHz. The noise figure for the 160 μm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 μm MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation.

Keywords

electron beam lithography; high electron mobility transistors; 0.1 micron; 154 GHz; 160 micron; 18 GHz; 300 GHz; MHEMT fabrication; cutoff frequency; e-beam lithography; gate length; high electron-mobility transistors; low-noise metamorphic HEMT; noise figure; reflowed T-gate; thermally reflow process; thermally reflowed e-beam resist; Cutoff frequency; Fabrication; HEMTs; Lithography; MODFETs; Manufacturing processes; Noise figure; Resists; Thermal resistance; mHEMTs;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.829027

Filename

1302222