InAlAs-InGaAs double-gate HEMTs on transferred substrate

Author

Wichmann, N. ; Duszynski, I. ; Wallart, X. ; Bollaert, S. ; Cappy, A.

Author_Institution

Departement Hyperfrequences et Semiconducteurs, UMR CNRS, France

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

354

Lastpage

356

Abstract

We report the fabrication and the dc characterization of the first In_0.52Al_0.48As-In_0.53Ga_0.47As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not been optimized, a maximum extrinsic transconductance gm of 450 mS/mm is obtained. At the same bias voltage, the drain current I_d is 120 mA/mm, which gives a large ratio gm/I_d of 3.8 V^-, indicating the improvement of the charge control efficiency due to the DG structure.

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; substrates; InAlAs-InGaAs; InP; bias voltage; charge control efficiency; dc characterization; double-gate HEMT; drain current; high-electron mobility transistors; maximum extrinsic transconductance; maximum oscillation frequency; transferred substrate; Fabrication; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Schottky barriers; Silicon on insulator technology; Substrates; HEMTs; High-electron mobility transistors; InP; maximum oscillation frequency; transferred substrate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.829029

Filename

1302224