Self-heating of submicrometer InP-InGaAs DHBTs

Author

Houtsma, V.E. ; Chen, Jiann-Jong ; Frackoviak, J. ; Hu, T. ; Kopf, R.F. ; Reyes, R.R. ; Tate, A. ; Yang, Y. ; Weimann, N.G. ; Chen, Y.K.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

Volume

25

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

357

Lastpage

359

Abstract

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 × 4 μm². From the temperature dependence of V/sub bc/, we measured a thermal resistance of R/sub th/ = 3.3 /spl deg/C/mW for DHBTs with ion-implanted n+-InP subcollector at room temperature, compared to a high R/sub th/ = 7.5 /spl deg/C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; ion implantation; semiconductor device models; 2D device simulations; InP-InGaAs; double heterojunction bipolar transistors; emitter dimensions; ion-implanted n+-InP subcollector; room temperature; self-heating; submicrometer DHBT; submicrometer emitter; thermal properties; thermal resistance; Contact resistance; Double heterojunction bipolar transistors; Electrical resistance measurement; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Temperature dependence; Thermal conductivity; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.828975

Filename

1302225