• DocumentCode
    996932
  • Title

    A 183 GHz fT and 165 GHz fmax regrown-emitter DHBT with abrupt InP emitter

  • Author

    Scott, D.W. ; Yun Wei ; Yingda Dong ; Gossard, A.C. ; Rodwell, M.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., USA
  • Volume
    25
  • Issue
    6
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    360
  • Lastpage
    362
  • Abstract
    Small-area regrown emitter-base junction InP/In-GaAs/InP double heterojunction bipolar transistors (DHBT) using an abrupt InP emitter are presented for the first time. In a device with emitter-base junction area of 0.7 × 8 μm2, a maximum 183 GHz fT and 165 GHz fmax are exhibited. To our knowledge, this is the highest reported bandwidth for a III-V bipolar transistor utilizing emitter regrowth. The emitter current density is 6×105 A/cm2 at V/sub CE,sat/ = 1.5 V. The small-signal current gain h/sub 21/ = 17, while collector breakdown voltage is near 6 V for the 1500-/spl Aring/-thick collector. The emitter structure, created by nonselective molecular beam epitaxy regrowth, combines a small-area emitter-base junction and a larger-area extrinsic emitter contact, and is similar in structure to that of a SiGe HBT. The higher fT and fmax compared to previously reported devices are achieved by simplified regrowth using an InP emitter and by improvements to the regrowth surface preparation process.
  • Keywords
    III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor heterojunctions; 165 GHz; 183 GHz; III-V bipolar transistor; InP-InGaAs-InP; abrupt InP emitter; collector breakdown voltage; double heterojunction bipolar transistors; emitter current density; emitter regrowth; emitter structure; emitter-base junction; epitaxial growth; extrinsic emitter contact; nonselective molecular beam epitaxy regrowth; regrown-emitter DHBT; regrowth surface preparation process; small-signal current gain; Bandwidth; Bipolar transistors; Current density; Double heterojunction bipolar transistors; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Molecular beam epitaxial growth; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.829667
  • Filename
    1302226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=996932