Impact of VCO Topology on SET Induced Frequency Response

Author

Chen, Wenjian ; Varanasi, Niha ; Pouget, Vincent ; Barnaby, Hugh J. ; Vermeire, Bert ; Adell, Philippe C. ; Copani, Tino ; Fouillat, Pascal

Author_Institution

Arizona State Univ., Tempe

Volume

54

Issue

6

fYear

2007

Firstpage

2500

Lastpage

2505

Abstract

Laser experiments performed on two SiGe voltage controlled oscillator (VCO) circuit topologies show different output spectrums. Analytical models demonstrate that spectral response is determined by design features that impact modulated amplitude or frequency characteristic of transient signals. Further analysis of the two circuits shows the DC bias condition dependence on the topology during laser strikes, which is the main cause of the frequency and amplitude modulation of the transient output signal.

Keywords

Ge-Si alloys; amplitude modulation; frequency modulation; heterojunction bipolar transistors; voltage-controlled oscillators; DC bias; HBT; SiGe; VCO; amplitude modulation; analytical models; frequency modulation; frequency response; output spectra; single event transients; spectral response; transient output signal; voltage controlled oscillator circuit topologies; Amplitude modulation; Analytical models; Circuit topology; Frequency response; Germanium silicon alloys; Laser modes; Signal design; Silicon germanium; Transient analysis; Voltage-controlled oscillators; Amplitude modulation; frequency modulation; phase noise; single-event transients; voltage-controlled oscillator (VCO);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.911422

Filename

4395090