Title :
Electron traps in bulk and epitaxial GaAs crystals
Author :
Martin, G.M. ; Mitonneau, A. ; Mircea, A.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée (LEP), Limeil Brévannes, France
Abstract :
Fifteen different electron traps have been characterised in v.p.e., l.p.e., m.b.e. and bulk-grown GaAs from d.l.t.s. experiments. An accurate description of each level is given, and allows a fruitful comparison with fragmentary previous data. A catalogue of these electron traps is provided as a working tool.
Keywords :
III-V semiconductors; electron traps; gallium arsenide; semiconductor epitaxial layers; LPE GaAs; MBE GaAs; VPE GaAs; bulk GaAs; deep level transient spectroscopy; electron traps; epitaxial GaAs crystals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770140
