Title :
High transmittance TFT-LCD panels using low-κ CVD films
Author :
Hong, Wan-Shick ; Jung, Kwan-Wook ; Choi, Joon-Hoo ; Hwang, Byung-Keun ; Chung, Kyuha
Author_Institution :
Dept. of Electron. Eng., Sejong Univ., South Korea
fDate :
6/1/2004 12:00:00 AM
Abstract :
Thin-film transistor liquid crystal display (TFT-LCD) panels of a high transmittance structure were fabricated by using a low-κ dielectric film as a passivation layer. The low-dielectric films were successfully deposited and patterned using a conventional plasma-enhanced chemical vapor deposition (PECVD) and plasma-assisted etching techniques. The interface between the a-Si channel and the overlaying passivation was modified by appropriate plasma treatment prior to the low-κ deposition. TFTs having the a-Si:C:O:H passivation showed a transfer characteristics similar to that of conventional TFTs. The high transmittance panel showed brightness approximately 30% higher than that of a standard panel without degrading other display characteristics, such as crosstalk.
Keywords :
amorphous semiconductors; dielectric thin films; liquid crystal displays; passivation; plasma CVD; sputter etching; thin film transistors; a-Si channel; a-Si:C:O:H passivation; aperture ratio; crosstalk; dielectric constant; display characteristics; high transmittance TFT-LCD panels; low-κ CVD films; low-κ deposition; low-κ dielectric film; overlaying passivation; passivation layer; plasma treatment; plasma-assisted etching techniques; plasma-enhanced chemical vapor deposition; thin-film transistor liquid crystal display; Chemical vapor deposition; Dielectric films; Etching; Liquid crystal displays; Passivation; Plasma applications; Plasma chemistry; Plasma displays; Plasma properties; Thin film transistors; Aperture ratio; TFT-LCD; dielectric constant; passivation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.828957
