Title :
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation
Author :
Lee, Chia-Ming ; Chuo, Chang-Cheng ; Liu, Yu-Chuan ; Chen, I-Ling ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., National Central Univ., Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current was injected underneath the opaque p-pad.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; 20 mA; InGaN-GaN; MQW LED; multiple-quantum-well light-emitting diodes; opaque p-pad; selective activation; semiinsulating current-blocking layer; Annealing; Atmosphere; Electrodes; Gallium nitride; Light emitting diodes; Nitrogen; Power generation; Quantum well devices; Temperature; Thermal conductivity; Current blocking layer; GaN; LEDs; light-emitting diodes; selective activation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.829666
