Analytic physics-based expressions for the empirical parameters of the Statz-Pucel MESFET model

Author

Agostino, S.D. ; Inzeo, G.D. ; Marietti, P. ; Tudini, L. ; Betti-Berutto, A.

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

40

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1576

Lastpage

1581

Abstract

The authors present a novel approach to the evaluation of the DC parameters of a semiempirical MESFET model: starting from the analytical expression of the drain current derived from a previously proposed physics-based model, they provide a method to calculate the empirical DC parameters of the so-called Raytheon model. The comparison between computed and measured DC characteristics is quite satisfactory on GaAs microwave FETs of 1 μm or more gate length. By adding to the results obtained in this work an adequate model of the stray capacitances, the circuit performance can be optimized using the technological characteristics of active devices

Keywords

Schottky gate field effect transistors; equivalent circuits; semiconductor device models; solid-state microwave devices; 1 micron; DC parameters; GaAs; Raytheon model; Statz-Pucel MESFET model; drain current; empirical parameters; microwave FETs; semiempirical MESFET model; stray capacitances; Circuits; Electron devices; Electron mobility; Gallium arsenide; HEMTs; Histograms; Inverters; MESFETs; Microwave devices; Microwave theory and techniques;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.146340

Filename

146340