Title :
High-level injection in the epilayer of the I2L transistor
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
The simple classical treatment of high-level injection in the epi region of the I2L transistor predicts an increase dof intrinsic ß (ratio of electron to hole current) with increasing VBE. However, a careful consideration of the coupling between the hole and electron current predicts a decrease of ß, which was confirmed by experiment.
Keywords :
bipolar transistors; integrated logic circuits; semiconductor device models; I2L transistor; epilayer; high level injection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770148
