Title :
Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology
Author :
Yu, Shaofeng ; Jung, Jongwan ; HOyt, Judy L. ; Antoniadis, Dimitri A.
Author_Institution :
Texas Instrum., Inc., USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
The strained-Si-strained-SiGe dual-channel layer substrate is known for its mobility advantage. This letter investigates its potential as a CMOS substrate that would enable single workfunction metal-gate electrode technology. Simulation shows that a single metal electrode with workfunction of 4.5 eV produces near-ideal CMOS performance on a dual-channel layer substrate that consists sequentially of a silicon wafer, an epitaxially grown 30% Ge relaxed SiGe layer, a compressively strained 60% Ge layer, and a tensile-strained-Si cap layer. Measured threshold voltages in experimental TiN gate n- and p-MOSFETs built on such dual-channel layer substrates support the simulation analysis.
Keywords :
CMOS integrated circuits; MOSFET; epitaxial growth; metal-semiconductor-metal structures; silicon compounds; substrates; work function; 4.5 eV; CMOS substrate; CMOSFET; TiN; dual heterostructure; epitaxial layer; silicon wafer; single workfunction metal-gate technology; strained-Si-strained-SiGe dual-channel layer structure; CMOS technology; Capacitive sensors; Degradation; Electrodes; Electrostatics; Germanium silicon alloys; MOS devices; Silicon germanium; Substrates; Threshold voltage; CMOSFETs; SiGe; dual heterostructure; expitaxial layer; metal-gate; strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.829038
