Lateral RESURF MOSFET fabricated on 4H-SiC(0001~) C-face

Lateral reduced surface field (RESURF) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC(0001^~) carbon face (C-face) substrates. The channel mobility of a lateral test MOSFET on a C-face was 41 cm²/V·s, which was much higher than 5 cm²/V·s for that on a Si-face. The specific on-resistance of the lateral RESURF MOSFET on a C-face was 79Ω · cm², at a gate voltage of 25 V and drain voltage of 1 V. The breakdown voltage was 460 V, which was 79% of the designed breakdown voltage of 600 V. We measured the temperature dependence of R_{on, sp} for the RESURF MOSFET on the C-face. The R_{on, sp} increased with the increase in temperature.