Title :
RF power silicon-on-glass VDMOSFETs
Author :
Nenadovic, N. ; Cuoco, V. ; Theeuwen, S.J.C.H. ; Schellevis, H. ; Spierings, G. ; Griffo, A. ; Pelk, M. ; Nanver, L.K. ; Jos, R.F.F. ; Slotboom, J.W.
Author_Institution :
Lab. of ECTM, Delft Univ. of Technol., Netherlands
fDate :
6/1/2004 12:00:00 AM
Abstract :
Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured fT/fmax is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.
Keywords :
glass; power MOSFET; power amplifiers; semiconductor device reliability; silicon; thermal stability; 0.8 micron; 100 V; 14 dB; 2 GHz; 350 micron; heat sinking; hot-carrier injection; power amplifiers; quiescent current; self-heating; silicon RF power MOSFETs; silicon-on-glass VDMOSFET; substrate transfer; thermal stability; vertical double-diffused MOSFET; Base stations; Gain measurement; Length measurement; Linearity; MOSFETs; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.829025