Title :
Passive modelocking of semiconductor lasers with tunable group velocity dispersion cavity
Author :
Azouz, Ahmed ; Stelmakh, N. ; Lourtioz, J.-M.
Author_Institution :
Inst. d´Electron. Fondamentale, Paris XI Univ., Orsay, France
Abstract :
Passive (hybrid) modelocking of AlGaAs lasers in an external cavity with high tunable group-velocity-dispersion (GVD) is reported. An internal grating compressor is used to continuously vary the intracavity GVD while a second grating compressor serves to compress the output pulses. Mode-locking is only found to occur for positive (normal) GVD. At optimum pulse compression, the dispersion of the external compressor is measured to linearly increase with intracavity dispersion. The large chirp amplitude detected at nearly-zero intracavity GVD as well as the general evolution of pulse parameters are shown to be well described by a modelocked laser model including fast laser gain saturation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mode locking; semiconductor lasers; AlGaAs lasers; III-V semiconductors; chirp amplitude; external cavity; internal grating compressor; intracavity GVD; laser gain saturation; output pulses; pulse parameters; semiconductor lasers; tunable group velocity dispersion cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930962