• DocumentCode
    997274
  • Title

    Active layers for device applications by using high-energy selenium implantation into GaAs

  • Author

    Surridge, R.K. ; Sealy, B.J.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    13
  • Issue
    8
  • fYear
    1977
  • Firstpage
    233
  • Lastpage
    234
  • Abstract
    High-energy, doubly charged selenium ions have been used to produce dopant profiles suitable for GaAs devices, such as f.e.t.s. Selenium has the advantage that beams of high purity may be formed.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; ion implantation; semiconductor doping; FET; GaAs; Se++ ions; dopant profiles; doubly charged ions; high energy Se implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770169
  • Filename
    4249316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997274