Title :
Active layers for device applications by using high-energy selenium implantation into GaAs
Author :
Surridge, R.K. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
High-energy, doubly charged selenium ions have been used to produce dopant profiles suitable for GaAs devices, such as f.e.t.s. Selenium has the advantage that beams of high purity may be formed.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; ion implantation; semiconductor doping; FET; GaAs; Se++ ions; dopant profiles; doubly charged ions; high energy Se implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770169
