Title :
Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.s
Author :
Hill, Graeme ; Robson, P.N. ; Majerfeld, A. ; Fawcett, W.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
The effect of ionised impurity scattering on the transient drift velocity of electrons in short-gate GaAs and InP field-effect transistors is investigated by Monte Carlo techniques.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; FET; GaAs; InP; Monte Carlo techniques; electron transit time; field effect transistors; ionised impurity scattering; transient drift velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770171
