Title :
Electric-field-induced anisotropy of thin semiconductor films
Author_Institution :
V.I. Ulyanou (Lenin) Electrical Engineering Institute, Department of Electron-Ion Processing of Solids, Leningrad, USSR
Abstract :
Assuming isotropic electrical properties for a semiconductor material, a mathematical derivation of a differential mobility tensor for carriers in thin semiconductor films with a tangential high electric field is represented.
Keywords :
carrier mobility; high field effects; semiconductor thin films; carrier mobility; differential mobility tensor; electric field induced anisotropy; tangential high electric field; thin semiconductor films;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770176
