Title :
Figure of merit for avalanche photodiodes
Author :
Kanbe, Hiroshi ; Kmura, Tatsuya
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
With regard to optimum signal/noise ratio at an optical receiver output, a figure of merit for an avalanche photodiode is proposed of the form ¿/¿¿, where n is the quantum efficiency and k is the ratio of the hole ionisation coefficient ß to that of an electron, ¿. An optimum avalanche-region width is estimated by using the figure of merit for a silicon avalanche photodiode at a given breakdown voltage.
Keywords :
avalanche diodes; photodiodes; S/N ratio; Si; avalanche photodiodes; figure of merit; hole ionisation coefficient; optimum avalanche region width; quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770190
