• DocumentCode
    997502
  • Title

    Figure of merit for avalanche photodiodes

  • Author

    Kanbe, Hiroshi ; Kmura, Tatsuya

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    13
  • Issue
    9
  • fYear
    1977
  • Firstpage
    262
  • Lastpage
    264
  • Abstract
    With regard to optimum signal/noise ratio at an optical receiver output, a figure of merit for an avalanche photodiode is proposed of the form ¿/¿¿, where n is the quantum efficiency and k is the ratio of the hole ionisation coefficient ß to that of an electron, ¿. An optimum avalanche-region width is estimated by using the figure of merit for a silicon avalanche photodiode at a given breakdown voltage.
  • Keywords
    avalanche diodes; photodiodes; S/N ratio; Si; avalanche photodiodes; figure of merit; hole ionisation coefficient; optimum avalanche region width; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770190
  • Filename
    4249338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997502