DocumentCode
997520
Title
Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction
Author
Lu, Liqing ; Bryant, Angus T. ; Santi, Enrico ; Palmer, Patrick R. ; Hudgins, Jerry L.
Author_Institution
South Carolina Univ., Columbia
Volume
23
Issue
1
fYear
2008
Firstpage
198
Lastpage
205
Abstract
In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.
Keywords
finite element analysis; p-i-n diodes; power semiconductor diodes; carrier lifetime zoning; fast pin diodes; finite-element simulations; forward characteristic; high-voltage diodes; local lifetime control; parameter extraction; power semiconductor modeling; reverse recovery measurement; Charge carrier lifetime; Electromagnetic interference; Finite element methods; Fourier series; P-i-n diodes; Parameter extraction; Power semiconductor switches; Predictive models; Semiconductor diodes; Voltage; Lifetime control; p-i-n diode model; physics-based model; power semiconductor modeling; variable lifetime;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2007.911825
Filename
4395161
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