• DocumentCode
    997520
  • Title

    Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction

  • Author

    Lu, Liqing ; Bryant, Angus T. ; Santi, Enrico ; Palmer, Patrick R. ; Hudgins, Jerry L.

  • Author_Institution
    South Carolina Univ., Columbia
  • Volume
    23
  • Issue
    1
  • fYear
    2008
  • Firstpage
    198
  • Lastpage
    205
  • Abstract
    In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.
  • Keywords
    finite element analysis; p-i-n diodes; power semiconductor diodes; carrier lifetime zoning; fast pin diodes; finite-element simulations; forward characteristic; high-voltage diodes; local lifetime control; parameter extraction; power semiconductor modeling; reverse recovery measurement; Charge carrier lifetime; Electromagnetic interference; Finite element methods; Fourier series; P-i-n diodes; Parameter extraction; Power semiconductor switches; Predictive models; Semiconductor diodes; Voltage; Lifetime control; p-i-n diode model; physics-based model; power semiconductor modeling; variable lifetime;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2007.911825
  • Filename
    4395161