DocumentCode
997590
Title
Enhanced static performance of AlGaAs/GaAs HBTs by fluoride surface treatment
Author
Erben, U. ; Schumacher, Hermann ; Seiler, U. ; Koenig, E.
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
Volume
29
Issue
16
fYear
1993
Firstpage
1489
Lastpage
1491
Abstract
Using a combination of wet and dry chemical treatments, the parasitic surface current between the base and emitter of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) has been suppressed by more than two orders of magnitude. This treatment opens up a variety of applications over a wide range of collector currents for selfaligned microwave AlGaAs/GaAs HBTs.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor technology; surface treatment; AlGaAs-GaAs; HBTs; collector currents; dry chemical treatments; fluoride surface treatment; parasitic surface current; self aligned microwave devices; static performance; wet chemical treatments;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930995
Filename
252513
Link To Document