Title :
Double epitaxial silicon avalanche photodiodes for optical-fibre communications
Author :
Nishida, Katsuhiko ; Ishii, Kazuhiro ; Minemura, Kouichi ; Taguchi, Kenko
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories and Laser Equipment Development Division, Kawasaki, Japan
Abstract :
A new type of planar silicon avalanche photodiodes have been fabricated with a high-low impurity profile with a wide avalanche region by double epitaxy. The a.p.d. characteristics of low noise, high speed, high quantum efficiency and relatively low operating voltage make them particularly suitable for optical-fibre communication systems.
Keywords :
avalanche diodes; optical communication equipment; photodiodes; double epitaxial Si avalanche photodiodes; optical fibre communications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770206
