Title :
Active broadbanding of aim X-band IMPATT-diode amplifier
Author :
Bains, A.S. ; Aitchison, C.S.
Author_Institution :
Chelsea College, Electronics Department, London, UK
Abstract :
Details of the bandwidth improvement obtained by applying active reactance compensation to an X-band impatt-diode amplifier are given. At 9.0 GHz and l0 dB gain, the 3 dB bandwidth improves from 230 to 780 MHz.
Keywords :
IMPATT diodes; microwave amplifiers; solid-state microwave circuits; IMPATT diode amplifier; X-band; active broadbanding; active reactance compensation; bandwidth improvement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770212
