Title :
Modulation characteristics of double-heterostructure superluminescent diodes
Author :
Harth, W. ; Amann, M.-C.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik, Mÿnchen, West Germany
Abstract :
High-speed double-heterostructure GaAs superluminescent diodes have been fabricated. Risetimes of 2 ns at optical linewidths of 10 nm have been achieved.
Keywords :
light emitting diodes; optical communication equipment; optical modulation; GaAs; double heterostructure superluminescent diodes; modulation characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770213
