Title :
Liquid-nitrogen-cooled submillimetre-wave silicon IMPATT diodes
Author :
Ishibashi, T. ; Ino, M. ; Makimura, T. ; Ohmori, M.
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
400 and 300 GHz c.w. oscillation characteristics for liquid-nitrogcn-cooled silicon IMPATT diodes are described. Output powers of 2.2 and 4.5 mW have been obtained at 412 and 295 GHz, respectively, and a highest oscillation frequency of 430 GHz observed.
Keywords :
IMPATT diodes; 300 GHz; 400 GHz; CW oscillation; liquid N2 cooled; submillimetre wave Si IMPATT diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770219
