• DocumentCode
    997836
  • Title

    Liquid-nitrogen-cooled submillimetre-wave silicon IMPATT diodes

  • Author

    Ishibashi, T. ; Ino, M. ; Makimura, T. ; Ohmori, M.

  • Author_Institution
    NTT, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    13
  • Issue
    10
  • fYear
    1977
  • Firstpage
    299
  • Lastpage
    300
  • Abstract
    400 and 300 GHz c.w. oscillation characteristics for liquid-nitrogcn-cooled silicon IMPATT diodes are described. Output powers of 2.2 and 4.5 mW have been obtained at 412 and 295 GHz, respectively, and a highest oscillation frequency of 430 GHz observed.
  • Keywords
    IMPATT diodes; 300 GHz; 400 GHz; CW oscillation; liquid N2 cooled; submillimetre wave Si IMPATT diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770219
  • Filename
    4249368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=997836