Title :
Series-connected GaAs and Si IMPATT-diode chips: some new results
Author :
Rucker, C.T. ; Amoss, J.W. ; Hill, G.N. ; Cox, N.W.
Author_Institution :
Georgia Institute of Technology, Solid State Sciences Division, Engineering Experiment Station, Atlanta, USA
Abstract :
Gallium-arsenide Schottky low¿high¿low IMPATT-diode chips have been successfully combined in series. A maximum c.w. power output of 22.5 W has been repeatedly obtained in X-band by using six 4-W 0.2-mm-diameter mesa GaAs devices. After careful preselection of GaAs chips (yield ¿ 20%), the GaAs devices combined more readily than did silicon p+¿n¿n+ impatt chips.
Keywords :
IMPATT diodes; gallium arsenide; 22.5 W CW power output; GaAs IMPATT diode chips; Si IMPATT diode chips; X-band; mesa GaAs devices; series connected IMPATT diode chips; six mesa operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770241
