• DocumentCode
    998166
  • Title

    Measurements of the close-to-carrier f.m. noise of pulsed InP t.e.o.s primed by an external oscillator

  • Author

    Prew, B.A.

  • Author_Institution
    Royal Signals & Radar Establishment, Malvern, UK
  • Volume
    13
  • Issue
    12
  • fYear
    1977
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    Experiments on phase-primed, pulsed InP transferred-electron oscillators show that the noise due to priming jitter can be reduced below the inherent noise level of the oscillator. Measurements are presented on the magnitude and spectrum of the oscillator noise.
  • Keywords
    Gunn oscillators; III-V semiconductors; electron device noise; indium compounds; close to carrier FM noise; oscillator noise; phase primed; priming jitter; pulsed InP transferred electron oscillators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770252
  • Filename
    4249403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998166