Title :
Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiency
Author :
Feezell, D. ; Buell, D.A. ; Coldren, L.A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, CA, Santa Barbara, USA
fDate :
7/7/2005 12:00:00 AM
Abstract :
All-epitaxial InP-based 1.3 μm VCSELs with a record-high continuous-wave differential quantum efficiency (57%) for single active region long-wavelength devices are demonstrated. Low-loss optical mode confinement is achieved through a selectively etched undercut tunnel-junction aperture. Singlemode continuous-wave lasing was observed up to 87°C and the room-temperature output power was 1.1 mW at a current of 4.1 mA and a wavelength of 1.305 μm.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; 1.1 mW; 1.3 micrometer; 1.305 micrometer; 4.1 mA; InP; VCSELs; continuous-wave operation; differential quantum efficiency; lasing; long-wavelength devices; low-loss optical mode confinement; tunnel-junction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051827
