DocumentCode
998295
Title
Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiency
Author
Feezell, D. ; Buell, D.A. ; Coldren, L.A.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California, CA, Santa Barbara, USA
Volume
41
Issue
14
fYear
2005
fDate
7/7/2005 12:00:00 AM
Firstpage
803
Lastpage
804
Abstract
All-epitaxial InP-based 1.3 μm VCSELs with a record-high continuous-wave differential quantum efficiency (57%) for single active region long-wavelength devices are demonstrated. Low-loss optical mode confinement is achieved through a selectively etched undercut tunnel-junction aperture. Singlemode continuous-wave lasing was observed up to 87°C and the room-temperature output power was 1.1 mW at a current of 4.1 mA and a wavelength of 1.305 μm.
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor lasers; surface emitting lasers; 1.1 mW; 1.3 micrometer; 1.305 micrometer; 4.1 mA; InP; VCSELs; continuous-wave operation; differential quantum efficiency; lasing; long-wavelength devices; low-loss optical mode confinement; tunnel-junction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051827
Filename
1468046
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