Title :
Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures
Author :
Kaiser, W. ; Mathwig, K. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A. ; Parillaud, O. ; Krakowski, M. ; Hadass, D. ; Mikhelashvili, V. ; Eisenstein, G.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
fDate :
7/7/2005 12:00:00 AM
Abstract :
Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; focused ion beam technology; gallium arsenide; indium compounds; ion beam lithography; semiconductor lasers; semiconductor quantum dots; 30 mW; 7.6 GHz; AlInGaAs-InAs-InP; QDash structures; complex distributed feedback lasers; focused ion beam lithography; laterally coupled DFB lasers; maskless FIB lithography; quantum dash layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051160
