• DocumentCode
    998422
  • Title

    Finite-Size Effect on Band Structure and Photoluminescence of Semiconductor Nanocrystals

  • Author

    Lang, X.Y. ; Zheng, W.T. ; Jiang, Q.

  • Author_Institution
    Jilin Univ., Changchun
  • Volume
    7
  • Issue
    1
  • fYear
    2008
  • Firstpage
    5
  • Lastpage
    9
  • Abstract
    Based on a model for size-dependent atomic cohesive energy of nanocrystals, a simple and unified model, without any adjustable parameter, has been established for finite size effect on shifts of valence and conduction band edges [DeltaEV(D) and DeltaEC(D)], and bandgap expansion [DeltaEG(D)| of semiconductor nanocrystals, where Delta denotes the expansion and D is the size of nanocrystals. In the light of this model, DeltaEV(D), DeltaEC(D), and DeltaEG(D) functions increase with dropping D in comparison with the corresponding bulk counterparts. The available experimental results of Si, CdS, ZnSe, and ZnTe nanocrystals confirm the validity of model.
  • Keywords
    II-VI semiconductors; cadmium compounds; conduction bands; elemental semiconductors; nanostructured materials; photoluminescence; silicon; valence bands; zinc compounds; CdS; Si; ZnSe; ZnTe; band structure; conduction band; finite-size effect; photoluminescence; semiconductor nanocrystals; valence band; Charge carrier processes; Effective mass; Lattices; Matter waves; Nanocrystals; Optical devices; Photoluminescence; Photonic band gap; Potential well; Zinc compounds; Band gap; Nanocrystal; Semiconductor; Size effect; nanocrystals; semiconductor; size effect;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2007.913426
  • Filename
    4395255