• DocumentCode
    998429
  • Title

    Al0.35Ga0.65N pin diodes exhibiting sub-fA leakage currents

  • Author

    Aslam, S. ; Yan, F. ; Franz, D. ; Ferguson, I. ; Asghar, A. ; Payne, A.

  • Author_Institution
    Raytheon ITSS, Lanham, MD, USA
  • Volume
    41
  • Issue
    14
  • fYear
    2005
  • fDate
    7/7/2005 12:00:00 AM
  • Firstpage
    820
  • Lastpage
    822
  • Abstract
    Using conventional photolithography, Al0.35Ga0.65N pin diodes have been fabricated that exhibit extremely low reverse bias leakage currents. Macroscopic I-V measurements from a statistical population of 64, 120 μm diameter, circular diodes gives a mean leakage current of 0.96 fA with a standard deviation of 0.90 fA at -0.5 V bias.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; p-i-n diodes; photolithography; wide band gap semiconductors; Al0.35Ga0.65N; circular diodes; leakage currents; photolithography; pin diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051268
  • Filename
    1468058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998429