A Nanodamascene Process for Advanced Single-Electron Transistor Fabrication

Author

Dubuc, Christian ; Beauvais, Jacques ; Drouin, Dominique

Author_Institution

Univ. of Sherbrooke, Sherbrooke

Volume

7

Issue

1

fYear

2008

Firstpage

68

Lastpage

73

Abstract

A process design based on a nanowire structure is demonstrated with the fabrication of metallic single-electron transistors. The method is capable of subattofarad resolution resulting in transistors that exhibited Coulomb blockade up to approximately 430 K. An analysis showed that these devices have sufficient operational margin to sustain process fluctuations and still operate within the temperature limits of conventional silicon field effect transistors.

Keywords

Coulomb blockade; integrated circuit interconnections; nanowires; single electron transistors; Coulomb blockade; advanced single-electron transistor fabrication; metallic single-electron transistors; nanodamascene process; nanowire structure; subattofarad resolution; Capacitance; Energy resolution; FET circuits; Fabrication; Fluctuations; Lithography; Silicon; Single electron transistors; Temperature distribution; Temperature sensors; Chemical mechanical polishing (CMP); electron beam lithography (EBL); nanodevice characterization; single-electron transistor (SET);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2007.913430

Filename

4395258