Title :
Characterisation of reactively sputtered silicon oxide for thin-film transistor fabrication
Author :
Jun, S.-I. ; McKnight, T.E. ; Melechko, A.V. ; Simpson, M.L. ; Rack, P.D.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Tennessee, Knoxville, TN, USA
fDate :
7/7/2005 12:00:00 AM
Abstract :
To overcome deficiencies of sputtered silicon dioxide (SiO2) films the RF magnetron sputtering process was optimised using a full factorial design of experiment. The optimised SiO2 film has a 5.7 MV/cm breakdown field and a 6.2 nm/min deposition rate at 10 W/cm2 RF power, 3 mtorr pressure, 300°C substrate temperature, and 56 V substrate bias. Thin-film transistors were also fabricated and characterised to show potential and prospective applications of the optimised SiO2 films.
Keywords :
insulating thin films; silicon compounds; sputter deposition; thin film transistors; 3 mTorr; 300 C; 56 V; RF magnetron sputtering process; SiO2; full factorial design of experiment; reactively sputtered silicon oxide; sputtered silicon dioxide films; thin-film transistor fabrication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051045
