DocumentCode
998460
Title
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
Author
Ólafsson, H. Ö ; Gudjónsson, G. ; Allerstam, F. ; Sveinbjörnsson, E. Ö ; Rödle, T. ; Jos, R.
Author_Institution
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
Volume
41
Issue
14
fYear
2005
fDate
7/7/2005 12:00:00 AM
Firstpage
825
Lastpage
826
Abstract
Stable operation of normally-off high mobility 4H-SiC MOSFET transistors from room temperature up to 150°C is reported. The output current in saturation is decreased by about 20% at 150°C as compared to room temperature. This small decrease in current with temperature is attributed to a decrease in the field effect mobility due to phonon scattering.
Keywords
electron mobility; high-temperature electronics; power MOSFET; semiconductor device reliability; silicon compounds; 150 C; SiC; field effect mobility; high mobility MOSFETs; output current; phonon scattering; stable operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051833
Filename
1468061
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