Title :
High speed (>13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
Author :
Chang, Y.H. ; Kuo, H.C. ; Lai, F.I. ; Tzeng, K.F. ; Yu, H.C. ; Sung, C.P. ; Yang, H.P. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsin-Tsu, Taiwan
fDate :
6/3/2005 12:00:00 AM
Abstract :
Improved oxide-implanted VCSELs utilising the tapered oxide layer are presented. The VCSELs exhibited similar static performance, but superior modulation bandwidth up to 13.2 GHz, compared with conventional blunt oxide VCSELs. The damping rate was reduced two times in the tapered oxide VCSEL and therefore enhanced the maximal modulation bandwidth. A very clean eye was demonstrated from the improved VCSEL with a rising time of 26 ps, falling time of 40 ps and jitter of less than 20 ps, operating at 10 Gbit/s with 6 mA bias and 6 dB extinction ratio. A comprehensive small signal measurement and analysis was conducted. Based on the equivalent circuit model, the extrinsic bandwidth limitation of the tapered oxide VCSELs was determined.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; equivalent circuits; gallium arsenide; quantum well lasers; surface emitting lasers; 10 Gbit/s; 13.2 GHz; 20 ps; 40 ps; 6 mA; blunt oxide VCSELs; damping rate; equivalent circuit model; extinction ratio; extrinsic bandwidth limitation; high speed modulation; maximal modulation bandwidth; modulation bandwidth; rising time; small signal measurement; static performance; tapered oxide VCSEL; tapered oxide confined layer; vertical cavity surface emitting lasers;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20045068
