Title :
X-band TRAPATT amplifiers
Author :
Oxley, C.H. ; Howard, Ayanna M. ; Purcell, J.J.
Author_Institution :
Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
A 2-stage, class-C. X-band pulsed trapatt amplifier has been demonstrated, giving a maximum gain of 9·5 dB over a 1 dB bandwidth of 200 MHz at a centre frequency of 9.4GHz. The trapatt diodes have a silicon p+¿n¿n+ structure with silver integral heatsinks and gold-button heat reservoirs. Single-stage amplifiers have been operated with input pulse widths of 0·5 ¿s and gains of 5 dB, with 11%3 dB bandwidths centred at 9·2 GHz.
Keywords :
TRAPATT diodes; microwave amplifiers; solid-state microwave circuits; 200 MHz bandwidth; 9.4 GHz centre frequency; Ag integral heatsinks; Si p+-n-n+ structures; X-band pulsed trapatt amplifier; class-C amplifiers; experimental results; integral Au button heat reservoirs; performance; trapatt diodes; two stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770303
