Title :
Technique for increasing the gain-bandwidth product of n-m.o.s. and p-m.o.s. integrated inverters
Author_Institution :
Columbia University, Department of Electrical Engineering & Computer Science, New York, USA
Abstract :
A method for increasing the bandwidth of single-channel m.o.s. integrated inverters, with practically no decrease in low-frequency gain, is presented. A 1st-order analysis and computer simulation are included.
Keywords :
circuit analysis computing; field effect integrated circuits; invertors; N-MOS integrated invertors; P-MOS integrated invertors; computer simulation; gain bandwidth increase technique; monolithic analogue invertors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770306
