Title :
White-light emission from GaAs m.o.s. structures
Author :
Bayraktaroglu, B. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
Emission of light from GaAs m.o.s. structures with anodic native oxides is reported. The spectrum is continuous, covers the visible range and has substantial parts that have higher photon energies than the GaAs energy gap. A part of the emission therefore seems to originate from the amorphous native GaAs oxide with its wide energy gap of about 4.5 eV. The light appears white to the eye and its intensity, but not its spectral distribution, can be controlled by the bias applied to the m.o.s. structure.
Keywords :
gallium arsenide; luminescent devices; metal-insulator-semiconductor structures; GaAs MOS structures; anodic native oxides; white light emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780316
