Title :
A Miniaturized 70-GHz Broadband Amplifier in 0.13-
CMOS Technology
Author :
Jin, Jun-De ; Hsu, Shawn S H
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
A 70-GHz broadband amplifier is realized in a 0.13- mum CMOS technology. By using five cascaded common- source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB under a power consumption (PDC) of 79.5 mW. Within the circuit bandwidth, the maximum input and output reflection coefficients are -6.1 and -10.8 dB, respectively. The group delay variation is plusmn 12.0 ps, and the output 1-dB compression point is 0.2 dBm at 5 GHz. With the miniaturized transformer design, the occupied core area of the circuit is only ~ 0.05 mm2 . This amplifier demonstrates a gain-bandwidth product of 231 GHz and a GBW/PDC up to 2.9 GHz/mW.
Keywords :
CMOS integrated circuits; high-frequency transformers; microwave amplifiers; wideband amplifiers; asymmetric transformer; bandwidth 70 GHz; broadband amplifier; frequency 5 GHz; gain 10.3 dB; gain-bandwidth product; group delay; miniaturized transformer design; power 79.5 mW; reflection coefficients; size 0.13 micron; Broadband amplifier; CMOS; common-source (CS) stage; gain-bandwidth product (GBW); transformer peaking;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.2007089