Title :
Highly reliable 1.3 μm InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning
Author :
Sato, H. ; Tsuchiya, T. ; Kitatani, T. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Takahashi, N. ; Aoki, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
5/27/2004 12:00:00 AM
Abstract :
An in-situ-cleaned and regrown 1.3 μm InGaAlAs buried-heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 3000 h aging test. It can thus be concluded from this result that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; indium compounds; laser reliability; semiconductor lasers; surface cleaning; 1.3 micron; BH lasers; InGaAlAs; InGaAlAs buried heterostructure laser; aging test; in situ cleaning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040426
