• DocumentCode
    998970
  • Title

    Highly reliable 1.3 μm InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning

  • Author

    Sato, H. ; Tsuchiya, T. ; Kitatani, T. ; Taike, A. ; Uchiyama, H. ; Shinoda, K. ; Takahashi, N. ; Aoki, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    40
  • Issue
    11
  • fYear
    2004
  • fDate
    5/27/2004 12:00:00 AM
  • Firstpage
    669
  • Lastpage
    671
  • Abstract
    An in-situ-cleaned and regrown 1.3 μm InGaAlAs buried-heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 3000 h aging test. It can thus be concluded from this result that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.
  • Keywords
    III-V semiconductors; ageing; aluminium compounds; gallium arsenide; indium compounds; laser reliability; semiconductor lasers; surface cleaning; 1.3 micron; BH lasers; InGaAlAs; InGaAlAs buried heterostructure laser; aging test; in situ cleaning;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040426
  • Filename
    1302795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=998970