• DocumentCode
    999048
  • Title

    Fine-grained polysilicon films with built-in tensile strain

  • Author

    Guckel, H. ; Burns, D.W. ; Visser, C. G C ; Tilman, H. C A ; Deroo, D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • Volume
    35
  • Issue
    6
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    800
  • Lastpage
    801
  • Abstract
    Novel processing conditions and strain diagnostic structures are used to demonstrate that polysilicon films with built-in tensile-strain can be achieved and that any physical size limitations due to compressive-buckling in polysilicon micromechanical structures can be eliminated
  • Keywords
    electric sensing devices; elemental semiconductors; internal stresses; semiconductor thin films; silicon; transducers; Si; built-in tensile strain; polysilicon films; polysilicon micromechanical structures; processing conditions; semiconductor; sensors; strain diagnostic structures; transducers; Annealing; Building materials; Capacitive sensors; Geometry; Micromechanical devices; Strain measurement; Structural beams; Tensile strain; Testing; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2534
  • Filename
    2534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999048