Title :
Fine-grained polysilicon films with built-in tensile strain
Author :
Guckel, H. ; Burns, D.W. ; Visser, C. G C ; Tilman, H. C A ; Deroo, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
Novel processing conditions and strain diagnostic structures are used to demonstrate that polysilicon films with built-in tensile-strain can be achieved and that any physical size limitations due to compressive-buckling in polysilicon micromechanical structures can be eliminated
Keywords :
electric sensing devices; elemental semiconductors; internal stresses; semiconductor thin films; silicon; transducers; Si; built-in tensile strain; polysilicon films; polysilicon micromechanical structures; processing conditions; semiconductor; sensors; strain diagnostic structures; transducers; Annealing; Building materials; Capacitive sensors; Geometry; Micromechanical devices; Strain measurement; Structural beams; Tensile strain; Testing; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
