• DocumentCode
    999059
  • Title

    InGaAsP/InP d.h. l.e.d.s for fibre-optical communications

  • Author

    Umebu, Itsuo ; Hasegawa, Osamu ; Akita, Kenzo

  • Author_Institution
    Fujitsu Laboratories Ltd., Semiconductor Laboratories, Kawasaki, Japan
  • Volume
    14
  • Issue
    16
  • fYear
    1978
  • Firstpage
    499
  • Lastpage
    500
  • Abstract
    InGaAsP l.e.d.s emitting at 1.24 ¿m are fabricated. Their characteristics at 100 mA are as follows: output power coupled into the fibre of 77 ¿W, a spectral halfwidth of 0.1 ¿m and a cutoff frequency of 70 MHz. The cutoff frequencies are proportional to the square root of the bias current. The recombination coefficient is estimated to be 5 × 10¿10cm3/s
  • Keywords
    III-V semiconductors; light emitting diodes; optical communication equipment; 1.24 micron LEDs; 70 MHz cutoff frequency; 77 microW output power coupled into fibre; InGaAsP/InP DH LEDs; characteristics; optical fibre communication equipment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780335
  • Filename
    4249496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999059