An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs

Author

Weiss, M.R. ; Pavlidis, Dimitris

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1197

Lastpage

1206

Abstract

A method for large-signal transistor analysis is presented. The method is based on the harmonic-balance approach but makes use of input data from measured S-parameters instead of DC or pulsed DC characteristics and a large-signal equivalent circuit with harmonic elements. The topology of this circuit is nearly identical to commonly used small-signal equivalent circuits; its application allows a detailed interpretation of the computed results, which are very precise due to the use of small-signal S-parameters. The large-signal model is applied to HEMTs and MESFETs. Their saturation mechanisms are investigated and the operational difference is discussed. The importance of including higher harmonic signal components in the large-signal analysis is also shown

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; power transistors; semiconductor device models; solid-state microwave devices; GaAs transistors; HEMTs; MESFETs; detailed interpretation; harmonic-balance approach; higher harmonic signal components; large-signal analysis; large-signal equivalent circuit; large-signal model; large-signal transistor analysis; measured S-parameters; models; power characteristics; saturation mechanisms; semiconductors; small-signal S-parameters; Circuit topology; Equivalent circuits; HEMTs; Harmonic analysis; MESFETs; MODFETs; Pulse circuits; Pulse measurements; Scattering parameters; Signal analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2538

Filename

2538