مرکز منطقه ای اطلاع رساني علوم و فناوري - Spin-polarised quantum dot light-emitting diodes with high polarisation efficiency at high temperatures

DocumentCode :

999144

Title :

Spin-polarised quantum dot light-emitting diodes with high polarisation efficiency at high temperatures

Author :

Fathpour, S. ; Holub, M. ; Chakrabarti, S. ; Bhattacharya, P.

Author_Institution :

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

Volume :

Issue :

fYear :

2004

fDate :

5/27/2004 12:00:00 AM

Firstpage :

694

Lastpage :

695

Abstract :

Light-emitting diode heterostructures with 150 nm Ga_0.95Mn_0.05As spin injector layers and In_0.4Ga_0.6As quantum dot active regions were grown and fabricated into 600 μm diameter mesa-shaped surface-emitting devices. Polarised light at 1.05 μm is observed with an output polarisation efficiency of 30% and record high temperature operation.

Keywords :

III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; light polarisation; magnetic semiconductors; manganese compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum dots; 1.05 micron; 150 nm; 600 micron; Ga_0.95Mn_0.05As spin injector layers; GaMnAs; In_0.4Ga_0.6As quantum dot active regions; InGaAs; high temperature operation; mesa shaped surface emitting devices; output polarisation efficiency; polarised light; spin-polarised quantum dot light-emitting diode heterostructures;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:20040432

Filename :

1302813

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=999144