Title :
High-order derivatives in measurement of mobility in HEMT devices
Author :
Rafael, G. ; Fernández, T. ; Rodriguez-Tellez, J. ; Tazón, A. ; Mediavilla, A.
Author_Institution :
Dept. of Commun. Eng., Univ. of Cantabria, Spain
fDate :
5/27/2004 12:00:00 AM
Abstract :
A novel and more accurate approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The results presented consider the behaviour of mobility in the linear and saturation bias regions.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; high electron mobility transistors; semiconductor device measurement; GaAs; GaAs HEMT devices; high electron mobility transistor; high order derivatives; linear bias regions; mobility equation; mobility measurement; saturation bias regions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040333
