Title :
Reliability characteristics of ohmic contacts for AlGaAs/GaAs HBTs
Author :
Nozu, T. ; Iizuka, Norio ; Kuriyama, Yasuhiko ; Hongo, Satoshi
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The thermal stability of ohmic contacts for AlGaAs/GaAs HBTs is presented. Ti/Pt/Au, Ti/Pt/Au and Cr/Pt/Au, and AuGe/Ni/Ti/Pt/Au were investigated for emitter, base, and collector contacts, respectively. As a result of 200 degrees C storage tests, it was found that these contacts did not limit the reliability of AlGaAs/GaAs HBTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; ohmic contacts; reliability; semiconductor-metal boundaries; stability; 200 C; AlGaAs-GaAs; AlGaAs/GaAs HBTs; AuGe-Ni-Ti-Pt-Au; AuGe/Ni/Ti/Pt/Au; Cr-Pt-Au; Cr/Pt/Au; Ti-Pt-Au; Ti/Pt/Au; base contacts; collector contacts; emitter contacts; ohmic contacts; reliability characteristics; storage tests; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931382
