Title :
High-yield self-alignment method for submicrometre GaAs m.e.s.f.e.t.s
Author_Institution :
CISE SpA, Segrate, Italy
Abstract :
A high-yield self-alignment technique for submicrometer GaAs m.e.s.f.e.t.s is described. This method allows the production of submicrometre gate lengths and source-drain spacings by means of standard contact photolithography without requiring a particularly fine geometry on the masks. A 0.5 ¿m long gate and a source-drain spacing of 2 ¿m were obtained.
Keywords :
Schottky gate field effect transistors; gallium arsenide; photolithography; semiconductor technology; solid-state microwave devices; 0.5 micron gate length; high yield self alignment method; microwave MESFETs; standard contact photolithography; submicron GaAs MESFETs; submicron gate lengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780351
